| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 500 | |
| ±20 | |
| 5 | |
| -55 to 150 | |
| 11 | |
| 100 | |
| 200 | |
| 750@10V | |
| 145@10V | |
| 145 | |
| 55 | |
| 30 | |
| 4700@25V | |
| 187@25V | |
| 3 | |
| 500 | |
| 300000 | |
| 35 | |
| 32 | |
| 80 | |
| 26 | |
| -55 | |
| 150 | |
| 20 | |
| 44 | |
| 5.3 | |
| 500 | |
| 3 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common source amplifier using this IXTH11P50 power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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