| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 85 | |
| ±15 | |
| 96 | |
| 13@10V | |
| 180@10V | |
| 180 | |
| 13100@25V | |
| 298000 | |
| 22 | |
| 34 | |
| 45 | |
| 23 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.4(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Use Ixys Corporation's IXTA96P085T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 298000 mW. This device utilizes trenchp technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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