| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 52 | |
| 50@10V | |
| 60@10V | |
| 60 | |
| 2845@25V | |
| 300000 | |
| 22 | |
| 29 | |
| 38 | |
| 22 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) |
| Largeur du paquet | 9.65(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTA52P10P power MOSFET. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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