| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±15 | |
| 150 | |
| 44 | |
| 65@10V | |
| 175@10V | |
| 175 | |
| 13400@25V | |
| 298000 | |
| 17 | |
| 42 | |
| 50 | |
| 25 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
Use Ixys Corporation's IXTA44P15T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 298000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes trenchp technology.
| EDA / CAD Models |
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