LittelfuseIXSA40N120L2-7TRMOSFET
Trans MOSFET N-CH SiC 1.2KV 41A 8-Pin(7+Tab) TO-263
Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies, solar inverters, high voltage DC/DC Converters, EV charging infrastructure, motor drives and induction heating.
Features
- • 1200 V with low RDS(on) = 30 mΩ / 80
- • SiC MOSFET technology with -3/+15...+18 V gate drive
- • Low input capacitance of Ciss = 3000 pF
- • Maximum virtual junction temperature of Tvj = 175 ⁰C
- • Ultra-fast intrinsic body diode with trr = 54.8 ns / 25.6
- • Kelvin source connection
Benefits
- • Low conduction losses
- • Low gate drive power requirements
- • Low thermal management effort
- • Suitable for hard-switching
- • Optimized gate control
Applications
- • Solar inverters
- • UPS
- • High voltage DC/DC converters
- • Switch mode power Supplies
- • EV charging infrastructures
- • Motor drives
- • Induction heating
- • Industrial power Supply
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Single Hex Source | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| 20 | |
| -55 to 175 | |
| 41 | |
| 104@18V | |
| 53@18V | |
| 1160@800V | |
| 250000 | |
| 9.5 | |
| 14.4 | |
| 11.5 | |
| 5.6 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.7(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.2(Max) mm |
| Carte électronique changée | 7 |
| Onglet | Tab |
| Conditionnement du fournisseur | TO-263 |
| 8 |
| EDA / CAD Models |
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