| Compliant with Exemption | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 13 | |
| 420@10V | |
| 105@10V | |
| 105 | |
| 7200@25V | |
| 208000 | |
| 24 | |
| 27 | |
| 75 | |
| 32 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) mm |
| Largeur du paquet | 5.21(Max) mm |
| Longueur du paquet | 16.13(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | ISOPLUS 247 |
| 3 |
Compared to traditional transistors, IXFR24N80P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 208000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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