| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 6.5 | |
| 18 | |
| 200 | |
| 25 | |
| 490@10V | |
| 140@10V | |
| 140 | |
| 7200@20V | |
| 500000 | |
| 14 | |
| 24 | |
| 45 | |
| 38 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) |
| Largeur du paquet | 5.21(Max) |
| Longueur du paquet | 16.13(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | ISOPLUS 247 |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXFR24N100Q3 power MOSFET can provide a solution. Its maximum power dissipation is 500000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.