| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 4 | |
| 3000@10V | |
| 39@10V | |
| 39 | |
| 1050@25V | |
| 150000 | |
| 18 | |
| 15 | |
| 32 | |
| 17 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) mm |
| Largeur du paquet | 4.83(Max) mm |
| Longueur du paquet | 10.66(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFP4N100Q power MOSFET. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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