| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 50 | |
| 160@10V | |
| 260@10V | |
| 260 | |
| 13500@25V | |
| 1135000 | |
| 13 | |
| 25 | |
| 60 | |
| 26 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Largeur du paquet | 25.42(Max) mm |
| Longueur du paquet | 38.23(Max) mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 |
Make an effective common source amplifier using this IXFN50N80Q2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1135000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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