| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 360 | |
| 2.6@10V | |
| 525@10V | |
| 525 | |
| 33000@25V | |
| 830000 | |
| 160 | |
| 100 | |
| 80 | |
| 47 | |
| -55 | |
| 175 | |
| Installation | Screw |
| Hauteur du paquet | 9.6(Max) |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
Use Ixys Corporation's IXFN360N10T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 830000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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