| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| HiperFET | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 5 | |
| 112 | |
| 200 | |
| 50 | |
| 39@10V | |
| 250@10V | |
| 250 | |
| 18600@25V | |
| 1500000 | |
| 8 | |
| 9 | |
| 72 | |
| 44 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Hauteur du paquet | 9.6(Max) |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFN132N50P3 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1500000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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