| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 94 | |
| 55@10V | |
| 228@10V | |
| 228 | |
| 14200@25V | |
| 1300000 | |
| 12 | |
| 15 | |
| 73 | |
| 35 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264 |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFK94N50P2 power MOSFET. Its maximum power dissipation is 1300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
| EDA / CAD Models |
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