| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 420 | |
| 2.6@10V | |
| 670@10V | |
| 670 | |
| 47000@25V | |
| 1670000 | |
| 255 | |
| 155 | |
| 115 | |
| 47 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264 |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXFK420N10T power MOSFET is for you. Its maximum power dissipation is 1670000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
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