| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 38 | |
| 220@10V | |
| 190@10V | |
| 190 | |
| 8340@25V | |
| 735000 | |
| 12 | |
| 16 | |
| 60 | |
| 20 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) mm |
| Largeur du paquet | 5.13(Max) mm |
| Longueur du paquet | 19.96(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264AA |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFK38N80Q2 power MOSFET. Its maximum power dissipation is 735000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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