| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 88 | |
| 40@10V | |
| 180@10V | |
| 180 | |
| 6300@25V | |
| 600000 | |
| 25 | |
| 24 | |
| 96 | |
| 25 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.45(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.24(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 | |
| Forme de sonde | Through Hole |
Increase the current or voltage in your circuit with this IXFH88N30P power MOSFET from Ixys Corporation. Its maximum power dissipation is 600000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with polar hiperfet technology.
| EDA / CAD Models |
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