| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 60 | |
| 110@10V | |
| 96@10V | |
| 96 | |
| 6250@25V | |
| 1040000 | |
| 8 | |
| 16 | |
| 37 | |
| 18 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.45(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.24(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 | |
| Forme de sonde | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXFH60N50P3 power MOSFET can provide a solution. Its maximum power dissipation is 1040000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes polar3 hiperfet technology.
| EDA / CAD Models |
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