| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 5 | |
| 52 | |
| 100 | |
| 25 | |
| 73@10V | |
| 110@10V | |
| 110 | |
| 3490@25V | |
| 400000 | |
| 20 | |
| 22 | |
| 60 | |
| 24 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.26(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 |
This IXFH52N30P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 400000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
| EDA / CAD Models |
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