| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 4 | |
| 150 | |
| 24 | |
| 100 | |
| 200 | |
| 230@10V | |
| 135@10V | |
| 135 | |
| 4200@25V | |
| 300000 | |
| 30 | |
| 33 | |
| 65 | |
| 16 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.26(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH24N50 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device is made with hdmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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