| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 12 | |
| 1050@10V | |
| 77@10V | |
| 77 | |
| 2700@25V | |
| 300000 | |
| 12 | |
| 9.8 | |
| 31 | |
| 12 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.26(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
Use Ixys Corporation's IXFH12N100F power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperrf technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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