| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 82 | |
| 75@10V | |
| 240@10V | |
| 240 | |
| 23000@25V | |
| 1250000 | |
| 24 | |
| 23 | |
| 79 | |
| 28 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.59(Max) |
| Largeur du paquet | 5.31(Max) |
| Longueur du paquet | 20.29(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Conditionnement du fournisseur | PLUS 264 |
| 3 |
Use Ixys Corporation's IXFB82N60P power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1250000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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