| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| BiMOSFET | |
| N | |
| Single | |
| ±20 | |
| 1700 | |
| 2.6 | |
| 200 | |
| 0.1 | |
| 1040 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264 |
| 3 | |
| Forme de sonde | Through Hole |
This powerful and secure IXBK75N170 IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 1040000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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