| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 50 | |
| 28@10V | |
| 67(Max)@10V | |
| 67(Max) | |
| 1900@25V | |
| 150000 | |
| 92 | |
| 110 | |
| 45 | |
| 14 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Use Vishay's IRFZ44RPBF power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with HEXFET technology.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.