| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 50 | |
| 28@10V | |
| 67(Max)@10V | |
| 67(Max) | |
| 1900@25V | |
| 150000 | |
| 92 | |
| 110 | |
| 45 | |
| 14 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Use Vishay's IRFZ44RPBF power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with HEXFET technology.
| EDA / CAD Models |
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