| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 400 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 1.8 | |
| 100 | |
| 100 | |
| 7000@10V | |
| 13(Max)@10V | |
| 13(Max) | |
| 5(Max) | |
| 3.2(Max) | |
| 640 | |
| 270@25V | |
| 8@25V | |
| 2 | |
| 50 | |
| 50000 | |
| 24 | |
| 10 | |
| 25 | |
| 11 | |
| -55 | |
| 150 | |
| 7.2 | |
| 50 | |
| 5.1 | |
| 170 | |
| 4 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRFR9310PBF power MOSFET, developed by Vishay. Its maximum power dissipation is 50000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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