| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 3.1 | |
| 100 | |
| 100 | |
| 1200@10V | |
| 8.7(Max)@10V | |
| 8.7(Max) | |
| 200@25V | |
| 2500 | |
| 17 | |
| 27 | |
| 15 | |
| 10 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
This IRFR9110PBF power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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