| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 5.1 | |
| 100 | |
| 100 | |
| 500@10V | |
| 12(Max)@10V | |
| 12(Max) | |
| 5.1(Max) | |
| 3.8(Max) | |
| 96 | |
| 270@25V | |
| 170 | |
| 2500 | |
| 31 | |
| 63 | |
| 9.6 | |
| 11 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Compared to traditional transistors, IRFR9014PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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