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IRFR9014PBF|VISHAY|simage
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MOSFETs

IRFR9014PBF

Trans MOSFET P-CH 60V 5.1A 3-Pin(2+Tab) DPAK

Vishay
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    COMPONENTS
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    5.1
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    100
  • Maximum Drain-Source Resistance (mOhm)
    500@10V
  • Typical Gate Charge @ Vgs (nC)
    12(Max)@10V
  • Typical Gate Charge @ 10V (nC)
    12(Max)
  • Typical Gate to Drain Charge (nC)
    5.1(Max)
  • Typical Gate to Source Charge (nC)
    3.8(Max)
  • Typical Reverse Recovery Charge (nC)
    96
  • Typical Input Capacitance @ Vds (pF)
    270@25V
  • Typical Output Capacitance (pF)
    170
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    31
  • Typical Rise Time (ns)
    63
  • Typical Turn-Off Delay Time (ns)
    9.6
  • Typical Turn-On Delay Time (ns)
    11
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    2.39(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3

Documentación y Recursos

Hojas de datos
Recursos de diseño