| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 5.1 | |
| 100 | |
| 100 | |
| 500@10V | |
| 12(Max)@10V | |
| 12(Max) | |
| 5.1(Max) | |
| 3.8(Max) | |
| 96 | |
| 270@25V | |
| 170 | |
| 2500 | |
| 31 | |
| 63 | |
| 9.6 | |
| 11 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 2.39(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Compared to traditional transistors, IRFR9014PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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