| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 23 | |
| 235@10V | |
| 150(Max)@10V | |
| 150(Max) | |
| 3600@25V | |
| 370000 | |
| 45 | |
| 94 | |
| 53 | |
| 26 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.82(Max) mm |
| Largeur du paquet | 5.31(Max) mm |
| Longueur du paquet | 15.87(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AC |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of Vishay's IRFP23N50LPBF power MOSFET. Its maximum power dissipation is 370000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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