| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 1.1 | |
| 500@10V | |
| 7.2@10V | |
| 7.2 | |
| 240@25V | |
| 1000 | |
| 39 | |
| 47 | |
| 13 | |
| 6.1 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.37(Max) mm |
| Largeur du paquet | 6.29(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | HVMDIP |
| 4 | |
| Forme de sonde | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IRFD9010PBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.