| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 1.3 | |
| 100 | |
| 25 | |
| 270@10V | |
| 16(Max)@10V | |
| 16(Max) | |
| 7.7(Max) | |
| 4.4(Max) | |
| 650 | |
| 360@25V | |
| 34@25V | |
| 2 | |
| 150 | |
| 1300 | |
| 17 | |
| 27 | |
| 18 | |
| 6.8 | |
| -55 | |
| 175 | |
| 20 | |
| 10 | |
| 7.2 | |
| 130 | |
| 2.5 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.28 |
| Largeur du paquet | 6.2 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | HVMDIP |
| 4 | |
| Forme de sonde | Through Hole |
As an alternative to traditional transistors, the IRFD120PBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1300 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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