Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
1.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
270@10V
Typical Gate Charge @ Vgs (nC)
16(Max)@10V
Typical Gate Charge @ 10V (nC)
16(Max)
Typical Gate to Drain Charge (nC)
7.7(Max)
Typical Gate to Source Charge (nC)
4.4(Max)
Typical Reverse Recovery Charge (nC)
650
Typical Input Capacitance @ Vds (pF)
360@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
34@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
150
Maximum Power Dissipation (mW)
1300
Typical Fall Time (ns)
17
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
6.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
10
Typical Gate Plateau Voltage (V)
7.2
Typical Reverse Recovery Time (ns)
130
Maximum Diode Forward Voltage (V)
2.5
Mounting
Through Hole
Package Height
3.28
Package Width
6.2
Package Length
4.9
PCB changed
4
Standard Package Name
DIP
Supplier Package
HVMDIP
Pin Count
4
Lead Shape
Through Hole