| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 3.1 | |
| 100 | |
| 100 | |
| 5000@10V | |
| 80(Max)@10V | |
| 80(Max) | |
| 42(Max) | |
| 10(Max) | |
| 1300 | |
| 980@25V | |
| 50@25V | |
| 2 | |
| 140 | |
| 125000 | |
| 29 | |
| 25 | |
| 89 | |
| 12 | |
| -55 | |
| 150 | |
| 12 | |
| 410 | |
| 1.8 | |
| 0.4 | |
| 1.8 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 8.79(Max) |
| Largeur du paquet | 4.65(Max) |
| Longueur du paquet | 10.36(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
This IRFBG30PBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 125000 mW. This device utilizes HEXFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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