| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 3.1 | |
| 100 | |
| 100 | |
| 5000@10V | |
| 80(Max)@10V | |
| 80(Max) | |
| 42(Max) | |
| 10(Max) | |
| 1300 | |
| 980@25V | |
| 50@25V | |
| 2 | |
| 140 | |
| 125000 | |
| 29 | |
| 25 | |
| 89 | |
| 12 | |
| -55 | |
| 150 | |
| 12 | |
| 410 | |
| 1.8 | |
| 0.4 | |
| 1.8 | |
| 20 | |
| Mounting | Through Hole |
| Package Height | 8.79(Max) |
| Package Width | 4.65(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
This IRFBG30PBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 125000 mW. This device utilizes HEXFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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