| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 20 | |
| 250@10V | |
| 110(Max)@10V | |
| 110(Max) | |
| 2870@25V | |
| 280000 | |
| 33 | |
| 74 | |
| 45 | |
| 22 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) mm |
| Largeur du paquet | 4.65(Max) mm |
| Longueur du paquet | 10.51(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Increase the current or voltage in your circuit with this IRFB20N50KPBF power MOSFET from Vishay. Its maximum power dissipation is 280000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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