| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 6.7 | |
| 500@10V | |
| 12(Max)@10V | |
| 12(Max) | |
| 5.1(Max) | |
| 3.8(Max) | |
| 96 | |
| 270@25V | |
| 170 | |
| 43000 | |
| 31 | |
| 63 | |
| 10 | |
| 11 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) mm |
| Largeur du paquet | 4.7(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRF9Z14PBF power MOSFET, developed by Vishay. Its maximum power dissipation is 43000 mW. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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