| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| 3.5 | |
| 100 | |
| 100 | |
| 1500@10V | |
| 22(Max)@10V | |
| 22(Max) | |
| 350@25V | |
| 40000 | |
| 15 | |
| 25 | |
| 20 | |
| 15 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) mm |
| Largeur du paquet | 4.7(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
As an alternative to traditional transistors, the IRF9620PBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 40000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes HEXFET technology.
| EDA / CAD Models |
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