| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 2 | |
| 3600@10V | |
| 17(Max)@10V | |
| 17(Max) | |
| 170@25V | |
| 3100 | |
| 11 | |
| 9.9 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRF710SPBF power MOSFET, developed by Vishay. Its maximum power dissipation is 3100 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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