| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 2 | |
| 10 | |
| 25 | |
| 3600@10V | |
| 17(Max)@10V | |
| 17(Max) | |
| 8.5(Max) | |
| 3.4(Max) | |
| 850 | |
| 170@25V | |
| 6.3@25V | |
| 2 | |
| 34 | |
| 36000 | |
| 11 | |
| 9.9 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| 20 | |
| 6 | |
| 240 | |
| 1.6 | |
| 1.7 | |
| 11.2 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.65(Max) |
| Longueur du paquet | 10.51(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
If you need to either amplify or switch between signals in your design, then Vishay's IRF710PBF power MOSFET is for you. Its maximum power dissipation is 36000 mW. This device is made with HEXFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.