| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 2 | |
| 10 | |
| 25 | |
| 3600@10V | |
| 17(Max)@10V | |
| 17(Max) | |
| 8.5(Max) | |
| 3.4(Max) | |
| 850 | |
| 170@25V | |
| 6.3@25V | |
| 2 | |
| 34 | |
| 36000 | |
| 11 | |
| 9.9 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| 20 | |
| 6 | |
| 240 | |
| 1.6 | |
| 1.7 | |
| 11.2 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Width | 4.65(Max) |
| Package Length | 10.51(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
If you need to either amplify or switch between signals in your design, then Vishay's IRF710PBF power MOSFET is for you. Its maximum power dissipation is 36000 mW. This device is made with HEXFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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