| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 14 | |
| 100 | |
| 25 | |
| 160@10V | |
| 26(Max)@10V | |
| 26(Max) | |
| 11(Max) | |
| 5.5(Max) | |
| 850 | |
| 670@25V | |
| 60@25V | |
| 2 | |
| 250 | |
| 88000 | |
| 24 | |
| 34 | |
| 23 | |
| 10 | |
| -55 | |
| 175 | |
| 20 | |
| 56 | |
| 6.5 | |
| 150 | |
| 2.5 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.14(Max) mm |
| Largeur du paquet | 4.65(Max) mm |
| Longueur du paquet | 10.52(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the IRF530PBF power MOSFET. Its maximum power dissipation is 88000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.