Infineon Technologies AGIPW65R080CFDAFKSA1MOSFET
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| 43.3 | |
| 100 | |
| 2 | |
| 80@10V | |
| 161@10V | |
| 161 | |
| 4440@100V | |
| 391000 | |
| 6 | |
| 18 | |
| 85 | |
| 20 | |
| -40 | |
| 150 | |
| Automotive | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21.1(Max) |
| Largeur du paquet | 5.21(Max) |
| Longueur du paquet | 16.13(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPW65R080CFDAFKSA1 power MOSFET. Its maximum power dissipation is 391000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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