Infineon Technologies AGIPW65R037C6FKSA1MOSFET
Trans MOSFET N-CH 650V 83.2A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 83.2 | |
| 37@10V | |
| 330@10V | |
| 330 | |
| 7240@100V | |
| 500000 | |
| 7 | |
| 32 | |
| 140 | |
| 22 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21.1(Max) mm |
| Largeur du paquet | 5.21(Max) mm |
| Longueur du paquet | 16.13(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this IPW65R037C6FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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