Infineon Technologies AGIPW60R190P6FKSA1MOSFET
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 20.2 | |
| 100 | |
| 1 | |
| 190@10V | |
| 37@10V | |
| 37 | |
| 1750@100V | |
| 151000 | |
| 7 | |
| 8 | |
| 45 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| 171@10V | |
| 57 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.1(Max) |
| Largeur du paquet | 5.21(Max) |
| Longueur du paquet | 16.3(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPW60R190P6FKSA1 power MOSFET. Its maximum power dissipation is 151000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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