Infineon Technologies AGIPP60R160C6XKSA1MOSFET
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 23.8 | |
| 160@10V | |
| 75@10V | |
| 75 | |
| 1660@100V | |
| 176000 | |
| 8 | |
| 13 | |
| 96 | |
| 13 | |
| -55 | |
| 150 | |
| Tube | |
| 140@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' IPP60R160C6XKSA1 power MOSFET is for you. Its maximum power dissipation is 176000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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