Infineon Technologies AGIPP16CN10NGXKSA1MOSFET
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| IPP16CN10NGXKSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 53 | |
| 100 | |
| 1 | |
| 16.5@10V | |
| 36@10V | |
| 36 | |
| 9 | |
| 13 | |
| 215 | |
| 15 | |
| 2420@50V | |
| 23@50V | |
| 2 | |
| 364 | |
| 100000 | |
| 7 | |
| 14 | |
| 27 | |
| 15 | |
| -55 | |
| 175 | |
| Tube | |
| 212 | |
| 1 | |
| 110 | |
| 1.2 | |
| 3 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
Use Infineon Technologies' IPP16CN10NGXKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 100000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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