Infineon Technologies AGIPP114N12N3GXKSA1MOSFET
Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±20 | |
| 4 | |
| 75 | |
| 11.4@10V | |
| 49@10V | |
| 49 | |
| 3240@60V | |
| 136000 | |
| 7 | |
| 36 | |
| 30 | |
| 19 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPP114N12N3GXKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 136000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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