Infineon Technologies AGIPP076N12N3GXKSA1MOSFET
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±20 | |
| 4 | |
| 100 | |
| 7.6@10V | |
| 76@10V | |
| 76 | |
| 4990@60V | |
| 188000 | |
| 10 | |
| 50 | |
| 39 | |
| 24 | |
| -55 | |
| 175 | |
| Tube | |
| 6.5@10V | |
| 400 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Make an effective common source amplifier using this IPP076N12N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 188000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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