Infineon Technologies AGIPP030N10N3GXKSA1MOSFET
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 100 | |
| 3@10V | |
| 155@10V | |
| 155 | |
| 11100@50V | |
| 300000 | |
| 28 | |
| 58 | |
| 84 | |
| 34 | |
| -55 | |
| 175 | |
| Tube | |
| 2.6@10V|3.1@6V | |
| 400 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Make an effective common gate amplifier using this IPP030N10N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.