Infineon Technologies AGIPD80R2K8CEATMA1MOSFET
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| 20 | |
| 3.9 | |
| 1.9 | |
| 100 | |
| 5 | |
| 2800@10V | |
| 12@10V | |
| 12 | |
| 290@100V | |
| 42000 | |
| 18 | |
| 15 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2400@10V | |
| 6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
This IPD80R2K8CEATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 42000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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