Infineon Technologies AGIPD50R399CPBTMA1MOSFET
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 3.5 | |
| 9 | |
| 100 | |
| 1 | |
| 399@10V | |
| 17@10V | |
| 17 | |
| 890@100V | |
| 83000 | |
| 14 | |
| 14 | |
| 80 | |
| 35 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.41(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this IPD50R399CPBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 83000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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